POWER OUTPUT OF A1/SnO2/n-Si SOLAR CELL
| dc.contributor.author | Tamakloe, Reuben Y. | |
| dc.contributor.author | Singh, K. | |
| dc.contributor.orcid | 0000-0002-5563-5930 | |
| dc.date.accessioned | 2024-11-21T12:59:14Z | |
| dc.date.available | 2024-11-21T12:59:14Z | |
| dc.date.issued | 1996 | |
| dc.description | This article is published by Pergamon 1996 and is also available at https://www.sciencedirect.com/science/article/abs/pii/0038092X96002897 | |
| dc.description.abstract | An Al/SnO2/n-Si solar cell from n-type silicon (6.5 f~-cm, (100)) wafers using chemical vapour deposition (CVD) has been fabricated. The fabrication details, I-V characteristics determining conversionefficiency (r/max), open circuit voltage (Voc) and short circuit current (lsc) have been presented. A maximum conversion efficiency of 6.3% for an unencapsulated cell of area 85.20 mrn 2 has been obtained | |
| dc.description.sponsorship | KNUST | |
| dc.identifier.citation | Solar Energy Vol. 56, No. 4, pp. 343-348, 1996 Copyright © 1996 Elsevier Science Ltd | |
| dc.identifier.uri | https://www.sciencedirect.com/science/article/abs/pii/0038092X96002897 | |
| dc.identifier.uri | https://ir.knust.edu.gh/handle/123456789/16009 | |
| dc.language.iso | en | |
| dc.publisher | Pergamon | |
| dc.title | POWER OUTPUT OF A1/SnO2/n-Si SOLAR CELL | |
| dc.type | Article |