Preparation of some compound semiconductor thin films and determination of their band gap energies
| dc.contributor.author | Totoe, Harriet | |
| dc.date.accessioned | 2012-03-09T00:10:12Z | |
| dc.date.accessioned | 2023-04-19T19:49:07Z | |
| dc.date.available | 2012-03-09T00:10:12Z | |
| dc.date.available | 2023-04-19T19:49:07Z | |
| dc.date.issued | 1997-07-09 | |
| dc.description | A thesis submitted to the Board of Postgraduate Studies, Kwame Nkrumah University of Science and Technology, Kumasi, in partial fulfilment of the requirement for the award of the Degree of Master of Science in Physical Chemistry, 1997 | en_US |
| dc.description.abstract | Thin films of some metal sulphides, (ZnS, CdS, Bi2S3 and MoS2) and selenides (ZnSe, CdSe, Sb2Se3, Bi2Se3 and MoSe2) have been prepared on glass (microscope) slides using chemical deposition techniques. The rate of deposition of the films was found to depend on both the pH and temperature of the chemical bath solution and the thickness of the films obtained by the method of weighing were of the order of 0.5 tm to 1.3 urn. Band gap energies were determined by both optical methods and resistance measurements. The optical bandgap energies were in the range of 0.99eV for Bi2Se3 to 3.43eV for ZnS; whilst the resistance bandgap energies ranged from 0.61eV for Bi2Se3 to 1.18eV for ZnSe. The resistivity of the films obtained from the chemical deposition technique was high and of the order of 1-6xl07Ωcrn which compare favourably with literature values for similar films. | en_US |
| dc.description.sponsorship | KNUST | en_US |
| dc.identifier.uri | https://ir.knust.edu.gh/handle/123456789/3188 | |
| dc.language.iso | en | en_US |
| dc.relation.ispartofseries | 2240; | |
| dc.title | Preparation of some compound semiconductor thin films and determination of their band gap energies | en_US |
| dc.type | Thesis | en_US |
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