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Please use this identifier to cite or link to this item: http://hdl.handle.net/123456789/5665

Title: Conduction Mechanism in Amorphous As2S3
Authors: Nkum, R. K.
Ampong, F. K.
Boakye, F.
Keywords: Amorphous semiconductor
mobility edge
Issue Date: Dec-2012
Publisher: Journal of Science and Technology
Citation: Journal of Science and Technology, Vol. 32, No. 3, 2012, pp 11-17
Abstract: The conduction mechanism in amorphous As2S3 has been studied by investigating the variation of the electrical resistivity over the temperature range 300 – 450 K. The electrical resistivity is characterised by a mobility gap of 2.15 eV over the temperature range investigated. The dc conductivity provides evidence of conduction by excitation of charge carriers into the band edges near the mobility edges. The results also give the possibility of conduction by a phonon-assisted hopping of polarons between localised states.
Description: Article published in the Journal of Science and Technology, Vol. 32, No. 3, 2012, pp 11-17
URI: http://hdl.handle.net/123456789/5665
Appears in Collections:Journal of Science and Technology 2000-

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