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http://hdl.handle.net/123456789/5060
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| Title: | Study of Hot-Carrier Induced Degradation in Delta-Doped and Conventional Mosfets. |
| Authors: | Diawuo, K. |
| Keywords: | Reliability
Delta-doped
Conventional,
MOSFET
Subthreshold
Transconductance,
stress
2-D (Two Dimensional) |
| Issue Date: | 2000 |
| Publisher: | Journal of Science and Technology |
| Citation: | Journal of Science and Technology, Vol. 20, Nos 1,2 & 3 2000. pp 118-123 |
| Abstract: | A DC stress analysis has been performed to assess the reliability of delta-doped and conventional MOSFETs. The experimental results and 2-D computer simulations indicate that there is little variations in the threshold voltage, trans-conductance and drain current in the delta- MOSFET due to stress than in the conventional MOSFET |
| Description: | Article published in the Journal of Science and Technology, Vol. 20, Nos 1,2 & 3 2000. pp 118-123 |
| URI: | http://hdl.handle.net/123456789/5060 |
| Appears in Collections: | Journal of Science and Technology 2000-
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